• Best-in-class test speed allows faster, more complete device characterization
•      Begin measuring BTI degradation as soon as 30ns after stress is removed
•      Measure transistor VT in less than 1µs using ID–VG sweep method
• Model 4225-RPM Remote Amplifier/Switch
•      Switches automatically between low-level precision DC I-V (via standard SMUs) and ultra-fast I-V measurements with no need for re-cabling
•      Improves single-pulse source and measurement performance by minimizing cable parasitic effects and increasing low current sensitivity
• Best high-speed, low-current measurement sensitivity available in a single-box integrated solution
•      Supports sub-microsecond pulse characterization of drain current at reduced drain voltage, minimizing drain-to- source fields that could otherwise skew test results
•      Ensures the source/measure instrumentation won’t be the limiting factor when making low-level measurements
•      Detects degradation trends sooner during the test, reduces the time needed to perform process reliability monitoring
• Simple, predictable interconnect scheme prevents measurement problems due to incorrect DUT connections

The Model 4200-BTI-A Ultra-Fast BTI Package combines all the hardware and software needed for a broad range of ultra-fast BTI test applications, as well as general characterization and lab automation tasks.

• Single-Pulse Charge Trapping/high-k dielectric characterization
• Silicon-On-Insulator testing
• LDMOS/GaAs isothermal characterization
• Flash RTS ID
• Phase-change random access memory (PCRAM) testing
• Ultra-fast NBTI characterization
• Charge pumping measurements
• Thermal impedance characterization
• MEMs capacitor testing
• Random telegraph signal (RTS) CMOS
• Charge-based capacitance measurement (CBCM) Materials testing for scaled CMOS, such as high-k dielectrics
• NBTI/PBTI reliability tests